Photo sensor module

ABSTRACT

The present disclosure relates to a photo sensor module. The thickness and size of an IC chip may be reduced by manufacturing a photo sensor based on a semiconductor substrate and improving the structure to place a UV sensor on the upper section of an active device or a passive device. The photo sensor module includes a semiconductor substrate, a field oxide layer, formed on the semiconductor substrate, and a photo sensor comprising a photo diode formed on the field oxide layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.14/796,050 filed on Jul. 10, 2015, which claims the benefit under 35 USC119(a) of Korean Patent Application No. 10-2014-0107936 filed on Aug.19, 2014 in the Korean Intellectual Property Office, the entiredisclosure of which is incorporated herein by reference for allpurposes.

BACKGROUND

1. Field

The following description relates to a photo sensor and to a photosensor module configuring a UV sensor using poly silicon formed on asemiconductor substrate, which minimizes size of a chip by forming apassive device processing sensing signal in a vertical direction with aUV sensor.

2. Description of Related Art

UV sensing has recently been incorporated in various portable products,such as, for example, smart phone and wearable devices, because of anincrease in awareness of protecting people from UV exposure. Suchproducts, which are equipped with a UV sensor, can signal alarm beforean end-user harms his or her health during outdoor exercise by measuringaccumulated UV exposure concentration. Moreover, a UV sensor in smartphones or wearable devices can operate functions such as, for example,proximity and motion control, and measure UV exposure concentration,heart rate, pulse frequency and blood oxygen level.

Silicon photo diode is generally used as a UV sensor. U.S. Pat. No.8,071,946 (Multi-function light sensor, registered on Dec. 6, 2011,hereinafter referred to as ‘prior document’) to Kita (“Kita”) is anexample of a UV sensor which uses silicon photo diode. Kita isincorporated herein in its entirety by reference in the same manner aswhen each cited document is separately and specifically incorporated orincorporated in its entirety.

Kita discloses a UV sensor manufactured based on a Silicon on Insulator(SOI) substrate structure. The UV sensor provides a SOI substrate 12comprising a silicon oxide insulator film 16 and a silicon semiconductorlayer 18 configured of single crystal silicon on a silicon substrate 14.An ultraviolet ray sensing UV sensor is formed on the siliconsemiconductor layer 18 configuring the SOI substrate 12. A first photodiode and a second photo diode which sense other rays, are formed on asilicon substrate 14 to avoid overlap with a UV sensor. A silicon oxideinsulator film separates a first photo diode, a second photo diode, anda UV sensor.

A UV sensor with the above-mentioned structure has some problem. A UVsensor is manufactured formed on a silicon semiconductor layer of a SOIsubstrate. Moreover, any active device or passive device to processsensing signal is not formed on a lower UV sensor.

This makes it difficult to reduce the size of an IC chip comprising a UVsensor and making it difficult to reduce the size of the smart phones orwearable devices smaller.

Demand for a UV sensor, which can detect UV with high sensitivity whilereducing manufacturing cost is increasing. The UV sensors known in theart are not capable of high sensitivity sensing function and beingcheaper than a SOI substrate.

SUMMARY

This Summary is provided to introduce a selection of concepts in asimplified form that are further described below in the DetailedDescription. This Summary is not intended to identify key features oressential features of the claimed subject matter, nor is it intended tobe used as an aid in determining the scope of the claimed subjectmatter.

The present disclosure provides a UV sensor which is based on polysilicon formed on a semiconductor substrate.

The present disclosure minimizes size of an IC chip size by improving astructure forming a passive device perpendicular to a UV sensor.

The present disclosure provides one senor module to sense both UV andnon-UV.

In one general aspect there is provided a photo senor module including asemiconductor substrate, a field oxide layer, formed on thesemiconductor substrate, and a photo sensor including a photo diodeformed on the field oxide layer.

The photo sensor module may include a first WELL region and a secondWELL region formed on the semiconductor substrate, a first source/drainregion formed on the first WELL region and a second source/drain regionformed on the second WELL region, an isolation layer formed between thefirst WELL region and the second WELL region, and a gate insulator filmand a gate electrode formed on the first WELL region and another gateinsulator film and another gate electrode formed on the second WELLregion.

The photo sensor module may include an insulator film formed on thefield oxide layer and the gate electrodes, and a passivation layerformed on the insulator film.

A part of the insulator film and the passivation layer may be removed,and a part of the photo diode is exposed to outside.

The photo diode may include two or more doping region formed in a moduleform to sense UV.

The photo diode may include a first doping region of high concentration,a second doping region of low concentration, doped in a differentimpurity from the first doping region, and a third doping region of highconcentration, doped in an identical impurity as the second dopingregion.

The photo diode may include a first doping region of high concentration,a second doping region of low concentration doped in an identicalimpurity as the first doping region, and a third doping region of highconcentration doped in different impurity from the second doping region.

The third doping region may be enlarged to contact the firstsource/drain region.

In another general aspect there is provided a photo sensor module,including a semiconductor substrate, a field oxide layer, formed on thesemiconductor substrate, a passive device, placed on the field oxidelayer, at least one insulator film laminated on the field oxide layer,and a photo diode formed on the at least one insulator film above thepassive device.

The photo sensor module may include a WELL region, formed on thesemiconductor substrate, and a doping region of high concentration,formed on the WELL region.

The photo sensor module may include a metal wire formed on the insulatorfilm, and a trench connecting the metal wire to the WELL region.

The trench may be filled with one of tungsten (W), aluminum (Al), orcopper (Cu).

A doping region of the photo diode and a source/drain doping region ofthe WELL region may be connected with a trench.

The metal wire may surround a portion of the photo diode and a barriermetal may be formed below the metal wire.

The barrier metal may include one of titanium(Ti), titanium nitridelayer(TiN), or a combination of titanium(Ti) and titanium nitridelayer(TiN).

The photo sensor may include a first insulator film laminated on thefield oxide layer, a second insulator film laminated on the firstinsulator film, a third insulator film laminated on the second insulatorfilm, and a fourth insulator film laminated on the third insulator film,at least one first metal wire formed in the second insulator film, atleast one first trench formed in the first insulator film, and the atleast one first trench connecting the at least one first metal wire to asource/drain doping region of a WELL region of the semiconductorsubstrate, at least one second metal wire is formed on the fourthinsulator film insulator, and the photo diode and at least one secondtrench is formed in the fourth insulator film, and the at least onesecond trench connecting the at least second first metal wire to thephoto diode.

The third insulator film may be thinner than the other insulator films.

In another general aspect there is provided a photo sensor module,including a semiconductor substrate, a sensor section formed in thesemiconductor substrate, at least one insulator film laminated on thesemiconductor substrate, a photo diode placed on an upper portion of thesensor section and formed on the insulator film, and a UV shield formedbetween the sensor section and the photo diode.

The sensor section may be configured to sense non-UV, and the photodiode is configured to sense UV.

In another general aspect there is provided a photo sensor module,including a semiconductor substrate, a doping region of highconcentration formed on the semiconductor substrate, a first field oxidelayer and a second field oxide layer formed on the semiconductorsubstrate, a first photo diode and a second photo diode formed on thefirst field oxide layer and the second field oxide layer, respectively,and a portion of the first photo diode and a portion of the second photodiode contacting with the doping region of high concentration.

The photo sensor module of claim 20, wherein the first photo diode andthe second photo diode are back-to-back diode.

A doping region of the first photo diode and a doping region of thesecond photo diode may be enlarged to reach a source/drain doping regionof a WELL region of the semiconductor substrate.

The following description discloses a UV sensor that senses UV and alogic section that processes the UV sensor sensed signal simultaneously,on a semiconductor substrate. For example, when forming a poly siliconlayer by deposing poly silicon on a field oxide layer or when forming aphoto diode by doping impurity on the poly silicon layer, devices can becomprised under the identical process as the identical process is alsoapplied together on a logic section. Therefore, the followingdescription discloses a UV sensor that not only reduces the manufacturecost but also simplifies the manufacture process.

The photo sensor module of the following description discloses a photodiode, which has a predetermined doping region on a semiconductorsubstrate. Hence, thickness of a semiconductor substrate maybe reduciblecompared to a manufacture, using a traditional SOI substrate.

Additionally, the following description discloses a UV sensor that cannot only place an active device or a passive device on a lower UV sensorbut can also improved a structure by placing a sensor section that cansense non-UV. Thus, a UV sensor can reduce an equipped IC chip size.

Other features and aspects will be apparent from the following detaileddescription, the drawings, and the claims.

BRIEF DESCRIPTION OF THE DRAWING

FIG. 1 is a diagram illustrating an example of a photo sensor module.

FIG. 2 is a diagram illustrating another example of a photo sensormodule.

FIG. 3 is a diagram illustrating another example of a photo sensormodule.

FIG. 4 is a diagram illustrating another example of a photo sensormodule.

FIG. 5 is a diagram illustrating another example of a photo sensormodule.

FIG. 6 is a diagram illustrating another example of a photo sensormodule.

FIG. 7 is a diagram illustrating another example of a photo sensormodule.

FIG. 8 is a diagram illustrating another example of a photo sensormodule according to the eighth embodiment of the present invention.

FIG. 9 is a diagram illustrating another example of a photo sensormodule.

FIG. 10 is a diagram illustrating another example of a photo sensormodule.

FIG. 11 is a diagram illustrating another example of a photo sensormodule.

FIG. 12 is a diagram illustrating another example of a photo sensormodule.

FIG. 13 is a diagram illustrating another example of a photo sensormodule.

Throughout the drawings and the detailed description, unless otherwisedescribed or provided, the same drawing reference numerals will beunderstood to refer to the same elements, features, and structures. Thedrawings may not be to scale, and the relative size, proportions, anddepiction of elements in the drawings may be exaggerated for clarity,illustration, and convenience.

DETAILED DESCRIPTION

The following detailed description is provided to assist the reader ingaining a comprehensive understanding of the methods, apparatuses,and/or systems described herein. However, various changes,modifications, and equivalents of the systems, apparatuses and/ormethods described herein will be apparent to one of ordinary skill inthe art. The progression of processing steps and/or operations describedis an example; however, the sequence of operations is not limited tothat set forth herein and may be changed as is known in the art, withthe exception of steps and/or operations necessarily occurring in acertain order. Also, descriptions of functions and constructions thatare well known to one of ordinary skill in the art may be omitted forincreased clarity and conciseness.

The features described herein may be embodied in different forms, andare not to be construed as being limited to the examples describedherein. Rather, the examples described herein have been provided so thatthis disclosure will be thorough and complete, and will convey the fullscope of the disclosure to one of ordinary skill in the art.

The following description provides a photo sensor module, comprising aUV sensor which is a photo sensor, combatable with general silicontechnology wherein, a ploy silicon layer, which is horizontally formedon a semiconductor substrate surface, a passive device formed on a lowerUV sensor. Hence, the following description provides a photo sensormodule at lower cost and having higher sensitivity sensing.

Unless indicated otherwise, a statement that a first layer is “on” asecond layer or a substrate is to be interpreted as covering both a casewhere the first layer directly contacts the second layer or thesubstrate, and a case where one or more other layers are disposedbetween the first layer and the second layer or the substrate.

Words describing relative spatial relationships, such as “below”,“beneath”, “under”, “lower”, “bottom”, “above”, “over”, “upper”, “top”,“left”, and “right”, may be used to conveniently describe spatialrelationships of one device or elements with other devices or elements.Such words are to be interpreted as encompassing a device oriented asillustrated in the drawings, and in other orientations in use oroperation. For example, an example in which a device includes a secondlayer disposed above a first layer based on the orientation of thedevice illustrated in the drawings also encompasses the device when thedevice is flipped upside down in use or operation.

Expressions such as “first conductivity type” and “second conductivitytype” as used herein may refer to opposite conductivity types such as Nand P conductivity types, and examples described herein using suchexpressions encompass complementary examples as well. For example, anexample in which a first conductivity type is N and a secondconductivity type is P encompasses an example in which the firstconductivity type is P and the second conductivity type is N.

FIG. 1 is a diagram illustrating an example of a photo sensor module. InFIG. 1, a semiconductor substrate 100 is a P type substrate doped with aP type impurity of low concentration. Other P type substrate, such as,for example, a P type substrate formed with a P-epi region, and the likemay be used without departing from the spirit and scope of theillustrative examples described.

For separation among devices of a semiconductor substrate (100), LocalOxidation of Silicon (LOCOS), Shallow Trench Isolation (STI) and DeepTrench Isolation (DTI) or an isolation layer of a combination of, STIand DTI may be used. An isolation layer can be differentiated with afirst isolation layer to a third isolation layer 110, 112, 114 and afirst isolation layer to a third isolation layer 110, 112, 114 areformed of a field oxide layer. A photo diode is formed on the firstfield oxide layer 110, which is explained below.

A first WELL region (PWELL) 120 and a second WELL region (NWELL) 130 areformed on a semiconductor substrate 100. A first WELL region 120 isformed between a first isolation layer 110 and a second isolation layer112, and a second WELL region 130 is formed between a second isolationlayer 112 and a third isolation layer 114. A junction isolation well 140can be formed on a side of a second WELL region 130 for separation amongdevices. When forming the WELL regions 120, 130, and 140 a drive-inannealing method can be processed in a high temperature of approximatelyover 1000° C., for dopant diffusion. Source/drain regions 122 and 132 ofhigh concentration are formed on a first WELL region 120 and a secondWELL region 130, respectively. Moreover, Lightly Doped Drain (LDD)regions 124 and 134 of low concentration are formed on source/drainregions 122 and 132 of high concentration, respectively. LDD regions 124and 134 are formed by a blanket ion injection method. A blanket ioninjection method is processed during or after a deposition of a gateelectrode 154.

A gate insulator film 152 and a gate electrode 154 are formed on a firstWELL region 120 and a second WELL region 130. Thickness of a gateinsulator film 152 formed on the first WELL region 120 and the secondWELL region 130 can be identical or different. Spacers 156 are formed onboth sides of a gate electrode 154.

A photo diode 160 is formed on a first isolation layer 110 as a UVsensor. Element 160 is referred to as a UV sensor or a photo diode inthe following description. A UV sensor 160 is formed by deposing polysilicon on a field oxide layer, i.e., a first isolation layer 110 thatis formed on a semiconductor substrate 100. A poly silicon layer 160senses UV when impurity is doped. In a non-exhaustive example, a UVsensor 160 includes, an N+ region 161 injected with N type impurity ofhigh concentration, a P region (P−, P−− region) 162 injected with P typeimpurity of low concentration, and a P+ region 163 injected with P typeimpurity of high concentration. Moreover, an N+ region 161 is type N, aP region 162 and a P+ region 163 are type P, and a PN junction is formedbetween type N and type P. Thus, a depletion layer is formed on the Pregion 162 of low concentration impurity, between an N+ region and a P+region. Electromotive force leading to a flow of electric current isgenerated by a light absorbed by the depletion layer. Accordingly, UV issensed through the generation of electric current. Thickness of the N+region 161, the P region (P−, P−− region) 162 and the P+ region 163 canbe identical or different.

The UV sensor 160 in the example described above is formed in a form ofa photo diode on a field oxide layer 110, which is formed on asemiconductor substrate 100 and senses UV. The manufacture process canbe simplified and thickness of the IC chip can be reduced as compared toapplying UV sensor on a SOI substrate.

In other examples described same reference numbers may be used inregards to identical structure but redundant explanation will beomitted.

FIG. 2 is a diagram of another example of a photo sensor module.

The photo sensor module shown in the example of FIG. 2 has a structurethat is similar to the photo sensor module shown in FIG. 1. The abovedescription of FIG. 1, is also applicable to FIG. 2, and is incorporatedherein by reference. Thus, the above description may not be repeatedhere. A doping region of a UV sensor formed on a field oxide layer inFIG. 2 is different than the doping region of a UV sensor formed on afield oxide layer in FIG. 1. FIG. 2 comprises an N+ region 164 injectedof N type impurity of high concentration, an N region (N−, N−− region)165 injected of N type impurity of low concentration, and a P+ region166 injected of P type impurity of high concentration. Thus, a depletionlayer is formed in an N region 165 of low impurity concentration,between N+ region and P+ region and an electromotive force is generatedby light absorbed by the depletion layer.

Like FIGS. 1 2, a UV sensor 160 photo diode can be applied in variousways, such as, for example, N+/P/P+ or N+/N/P+, although it is notlimited to the doping region. A UV sensor can be formed with a photodiode of other doping regions, which are shown in the other examples.

FIG. 3 is a diagram of another example of a photo sensor module.

The photo sensor module shown in the example of FIG. 3 has an structurethat is similar to the photo sensor modules shown in FIGS. 1 and 2. Theabove description of FIGS. 1-2, is also applicable to FIG. 3, and isincorporated herein by reference. Thus, the above description may not berepeated here. In FIG. 3, a semiconductor substrate 100 is provided, afirst isolation layer to a third isolation layer 110, 112, 114 areformed on a semiconductor substrate 100. A first WELL region (PWELL) toa third WELL region (NWELL) 120, 130, 140 are formed on a semiconductorsubstrate 100. A source/drain region 122 and 132 of high concentrationare formed on a first WELL region 120 and a second WELL region 130. Agate insulator film 152, a gate electrode 154, and spacers 156 areformed on both sides of a gate electrode 154.

In the example shown in FIG. 3, doping region of a photo diode whichforms a UV sensor 170, comprises a P+ region, a P/P−/P−− region, and aN+ region. Among a P+ region, a P/P−/P−− region, and an N+ region, theN+ doping region 171 adjoins a semiconductor substrate 100. The N+doping region 171 of a photo diode is extended and contacts with asource/drain region (N+) 122 of a first WELL region 120. The N+ dopingregion 171 of a photo diode is formed together, generally in adeposition method, when other doping region P+ region and P/P−/P−−region are formed. Thickness of the doping regions can all be identicalor different. Likewise, a photo diode formed in a deposition method isidentically applied on other examples of the photo sensor module.

Thus, electromotive power is generated between a P+ region and an N+region, in a P region of low impurity concentration and in an extendedregion.

FIG. 4 is a diagram of another example of a photo sensor module and FIG.5 is a diagram of yet another example of a photo sensor module.

In FIG. 4, a first field oxide layer 210 and a second field oxide layer220 are symmetrically formed on a semiconductor substrate 200. Asemiconductor substrate 200 is a P type substrate doped of P typeimpurity.

An N+ region 250 doped of N type impurity of high concentration isformed adjacent to a central part where a first field oxide layer 210and a second field oxide layer 220 adjoin.

Photo diodes 230, 240 are symmetrically formed on the first field oxidelayer 210 and on the second field oxide layer 220, respectively. A photodiode 230 formed on a first field oxide layer 210 forms an N+ dopingregion 231 by contacting with an N+ region 250, doped of highconcentration. A P (P−, P−−) doping region and a P+ doping region areformed in order, adjacent to the N+ doping region 231. Moreover, a photodiode formed on a second field oxide layer 210 forms an N+ doping region241 by contacting with an N+ region 250, doped of high concentration. AP (P−, P−−) doping region and a P+ doping region are formed in order,adjacent to a N+ doping region 241. In other words, N+ doping regions231, 241 are extended and contacts with an N+ region 250. Photo diodes230, 240 are all formed in a deposition method on a first field oxidelayer 210 and the field oxide layer 220, and thickness of photo diodes230, 240 can be identical or different.

In the example shown in FIG. 4, a doping region of photo diodes 230,240, which comprises a UV sensor is a structure that is in contact witha semiconductor substrate 200.

Meanwhile, an example of a doping region of a UV sensor, which is formeddifferent but with an identical structure with FIG. 4 is shown in FIG.5. FIG. 5 shows that a first field oxide layer 210 and a second fieldoxide layer 220 are formed identically on a P type semiconductorsubstrate 200. Photo diodes 230, 240, which is a UV sensor, are formedand on a first field oxide layer 210 and a second field oxide layer 220.

Photo diodes 230, 240 of FIG. 5 comprise a different doping region froma doping region of FIG. 4. A P+ doping region, an N− doping region andan N+ doping region are formed in order on a first field oxide layer 210and a second field oxide layer 220 according to a P+ region 250 doped ofhigh concentration on a P type semiconductor substrate 200. P+ dopingregions 231, 241 is extended to contact with the P+ region 250 doped ofhigh concentration. A P+ region 250 is a region, doped of highconcentration compared to a P type semiconductor substrate 200.

FIG. 6 is a cross sectional diagram of another example of a photo sensormodule.

The photo sensor module of FIG. 6 is a structure of two photo diodes330, 340 formed symmetrically. In FIG. 6, photo diodes 330, 340 have aP+/N−/P+ doping region using a Back-to-Back diode.

A P type semiconductor substrate 300 is provided. A first field oxidelayer 310 and a second field oxide layer 320 are symmetrically formed ona semiconductor substrate 300. In a central part adjacent a first fieldoxide layer 310 and a second field oxide layer 320, a P+ region 350doped of P type impurity of high concentration is formed.

Doping region of photo diodes 330, 340, which is an UV sensor withP+/N−/P+ doping region is formed on the first field oxide layer 310 andthe second field oxide layer 320, respectively. A side of photo diodes330 and 340 facing each other is extended and forms P+ doing regions 331and 341 respectively. The P+ doing regions 331 and 341 contacts with aP+ region 350. The doping regions 331 and 341 of photo diodes 330 and340 comprise a UV sensor and contacts with a semiconductor substrate300.

In another example, a photo diode of an N+/P/N+ doping region, differentfrom the P+/N−/P+ doping region can be provided. In this example, an N+doping region is formed on a P type semiconductor substrate. Theextended section of photo diode contacts with an N+ doping region of asemiconductor substrate.

FIG. 7 is a diagram illustrating another example of a photo sensormodule.

Referring to a photo sensor module of FIG. 7, semiconductor substrate400 doped in a first P type impurity is formed.

On a semiconductor substrate 400 surface, isolation layers 410, 412, and414 of a combination of LOCOS, STI and DTI are formed for separation ofdevices. In a non-exhaustive example, a first isolation layer to thirdisolation layer 410, 412, and 414 are field oxide layer.

A first WELL region PWELL 420 and a second WELL region NWELL 430 areformed between the first isolation layer to the third isolation layers410, 412, and 414. A first WELL region 420 is formed between a firstisolation layer 410 and a second isolation layer 412, and a second WELLregion 430 is formed between a second isolation layer 412 and a thirdisolation layer 414. On a side of a second WELL region 430, a junctionisolation well 440 can be formed for separation of devices. When formingthe WELL regions 420, 430, and 440 a drive-in annealing can be processedin a high temperature of approximately over 1000° C. for dopantdiffusion. On the first WELL region 420 and the second WELL region 430,source/drain regions 421 and 431 of high concentration are formed. Onlower spacers 505, LDD regions 422 and 432, which are doping region oflow concentration, are formed. LDD regions 422 and 432 can be formed ina blanket ion injection method.

A first insulator film to a fourth insulator film 500, 510, 520, and 530are formed in order on a semiconductor substrate 400.

A first layer insulator film 500 is formed on a semiconductor substrate400. A resistor 502, a gate insulator film 503, and a gate electrode 504are formed in a first layer insulator film 500. A gate insulator film503 and a gate electrode 504 are formed on a first WELL region 420 and asecond WELL region 430. Spacers 505 are formed on both sides of a gateelectrode 504. Multiple trenches 506 are formed on a first layerinsulator film 500. A trench 506 connects the source/drain region 421with a metal wire 511, which is formed on a second layer insulator film510. A conductor is filled in a trench 506. Conductors, such as, forexample, Tungsten (W), Aluminum (Al), and Copper (Cu) so on are used asa filling material. A trench 506 formed on the first layer insulatorfilm 500 is called a ‘first trench.’

A second layer insulator film 510 is formed on a first layer insulatorfilm 500. A metal wire 511 is formed on a second layer insulator film510. A part of a metal wire 511 is connected with a first trench 506.

A third layer insulator film 520 is formed on a second layer insulatorfilm 520. Thickness of a third layer insulator film 520 is comparativelythinner than other layer insulator films 500, 510, and 530. This isbecause no structure is formed on a third layer insulator film 520 butit only serves an insulation function.

A fourth layer insulator film 530 is formed on a third layer insulatorfilm 520. A photo diode 531, which is a UV sensor, is formed on a fourthlayer insulator film 530. A photo diode 531 has a P+ region, a P (or P−,P−−) region, and a N+ doping region. A P+ region and a N+ region,herein, should be connected with a source/drain region 421, 431. Forthis, a metal wire 550 is formed on a fourth layer insulator film 550. Atrench 532 a, which connects a photo diode 531 and a metal wire 550 isformed on a fourth layer insulator film 530. A trench 532 b thatconnects a metal wire 550 and a metal wire 511 of a second layerinsulator film 510 is also formed. Trench 532 b connects the metal wire550 to the metal wire 511 via a third layer insulator film 520 and afourth layer insulator film 530. Trenches 532 a and 532 b formed on afourth layer insulator film 530 is called a ‘second trench.’ Trenches532 a and 532 b, unlike a form of a first trench, can be formed in a viaform according to thickness of a layer insulator film.

In this example shown in FIG. 7, a photo diode 531 is absorbed in a Pregion of low concentration that is formed between a P+ region and an N+region when the light is irradiated from above. Electromotive power isgenerated by absorbed light, and the photo diode 531 senses UV, usingchange of electromotive power. In this example, a photo diode 531, whichis a UV sensor is formed on a fourth layer insulator film 530, separatedfrom a semiconductor substrate 400. A resistor 502, which is a passivedevice, is formed on a first isolation layer 410, thus, a passive deviceand a UV sensor are placed vertically.

FIG. 8 is a cross sectional diagram of another example of a photo sensormodule. The example of FIG. 8 is different from the example shown inFIG. 7 because a second layer insulator film and a third layer insulatorfilm are not formed in the example shown in FIG. 8.

A photo diode 531, which is a UV sensor, is a structure of source/drainregions 421, 431, metal wires 533, 550, and trenches 506, 532 that areconnected with each other. An N+ doping region of a photo diode 531 isdirectly connected with a source/drain region 421 of a first WELL region420 via a trench 506.

In the case of the eighth embodiment, a UV sensor is placed on an upperpassive device.

FIG. 9 is a cross sectional diagram of another example of a photo sensormodule.

Referring to the photo sensor module of FIG. 9, a first layer insulatorfilm 500 and a second layer insulator film 530 are included on asemiconductor substrate 400.

A first WELL region 420 and a second WELL region 430 are formed on asemiconductor substrate 400. A source/drain region 505 is formed on afirst WELL region 420 and a second WELL region 430. Moreover, withreference to FIG. 7, a second isolation layer 412 is formed on asemiconductor substrate 400, between a first isolation layer 410, thefirst WELL region 420, and a second WELL region 430.

On a first layer insulator film 500, a resistor 502, a gate electrode504, and a gate insulator film 503 are formed. A plurality of a firsttrench 506 are formed. This is identical to the other recited examples,the description of which are incorporated herein by reference. Thus, theabove description may not be repeated here.

A photo diode 531, which is a UV sensor, is formed on a second layerinsulator film 530. A photo diode 531 comprises N+/P (P−, P−−) N+ dopingregion. In a second layer insulator film 530, metal wires 533 a, 533 b,533 c are provided, and a part of metal wires 533 b, 533 c are placed onan N+ region of a photo diode 531. A metal wire 533 c is formed in astair shape and surrounds an N+ doping region. On lower side of a metalwire 533 c, a barrier metal 534 is formed of titanium (Ti), titaniumnitride layer (TiN) or a combination (TiN) of titanium (Ti) and titaniumnitride layer (TiN).

An N+ doping region of a UV sensor is directly connected with asource/drain region 505 of a first WELL region 420.

Since a second trench 532 is also formed on a second layer insulatorfilm 530, a second layer insulator film 530 is connected with a metalwire 550, formed on upper portion of the second layer insulator film530, or with a first trench 506.

FIG. 10 is a cross sectional diagram of another example of a photosensor module.

The photo sensor module of FIG. 10 provides a semiconductor substrate600. WELL regions 602, 604, and 606 and isolation layers 610, 612, and614 are formed on the semiconductor substrate 600. A photo diode 630, aUV sensor, which has a N+/P/P+ doping region is formed on a firstinsolation layer 610.

On a upper semiconductor substrate 600, a layer insulator film 620 isformed. A layer insulator film 620 can be thicker than thickness of asemiconductor substrate 600. A part of a layer insulator film 620 has aregion 625 that is removed. A part of a P doping region of a photo diode530 is exposed by the removed region 625.

A passivation layer 640 is formed on a layer insulator film 620.

FIG. 11 is a cross sectional diagram of another example of a photosensor module. Compared to the example of FIG. 10, a part of a layerinsulator film 620 is not removed in FIG. 11.

Isolation layers 610, 612, 614 are formed on a semiconductor substrate600 wherein WELL regions 602, 604, 606 are formed. A photo diode 630 isformed on an isolation layer 610 of a semiconductor substrate 600. Agate electrode 632 and a gate insulator film 633 are formed on asemiconductor substrate 600. A layer insulator film 620 is formed on thesemiconductor substrate 600, including a photo diode 630, a gateelectrode 632 and a gate insulator film 633. A passivation layer 640 islaminated on a layer insulator film 620. A passivation layer 640maximizes UV transmissivity.

FIG. 12 is a cross sectional diagram of another example of a photosensor module.

FIG. 12 also has a similar structure in some parts compared to the otherexamples, for example, FIG. 12 has similar structure as that of FIG. 7.The above description of the similar structures of FIG. 7 isincorporated herein by reference in FIG. 12. Thus, the above descriptionmay not be repeated here.

Referring to FIG. 12, a first layer insulator film to a fourth layerinsulator film 710, 720, 730, 740 are laminated in order on asemiconductor substrate 700.

On a semiconductor substrate 700, a first insulator film to a thirdinsulator film 701, 702, 703 are formed and WELL regions 704, 705, 706are formed according to the insulator films 701, 702, 703. A resistor711, a gate electrode 712, and a first trench 713 are formed on a firstlayer insulator film 710. Metal wires 721 are formed on a second layerinsulator film 720. A photo diode 732 and second trenches 731 are formedon a third layer insulator film 730. Metal wires 741 connected withsecond trenches 731 are formed on a fourth layer insulator film 740. Apassivation layer 750 is formed on a fourth layer insulator film 740.

FIG. 12 provides a structure that exposes a sensing region of a photodiode 732 to the outside. This is because a part of region 760 of athird layer insulator film 730, a fourth layer insulator film 740, and apassivation layer 740 is removed by an etching process. A photo sensormodule can also be manufactured in this structure.

With reference to FIG. 13, a photo sensor module can provide sensingfunction, which simultaneously senses UV and non-UV.

FIG. 13 is a drawing of another example of a photo sensor module. Asemiconductor substrate 800 is shown in FIG. 13.

To separate the devices, isolation layers of LOCS, STI DTI or acombination of LOCS, STI and DTI are formed on a semiconductor substrate800. An isolation layer can be differentiated with a first isolationlayer to a fourth isolation layer 801, 802, 803, 804. A sensor section810, sensing non-UV, is formed between a first isolation layer 801 and asecond isolation layer 802; a first WELL region (PWELL) 812 is formedbetween a second isolation layer 802 and a third isolation layer 803; asecond WELL region (NWELL) 814 is formed between a third isolation layer803 and a fourth isolation layer 804. A source/drain region 812 a ofhigh concentration and a LDD region 812 b of low concentration dopingregion, are formed on a first WELL region 812 and a second WELL region814. Further, a junction isolation well 816 is formed on a side of asecond WELL region 814.

A first layer insulator layer (IMD: Inter metal dielectric) 820 isformed on a semiconductor substrate 800. A gate insulator film 821 and agate electrode 822 are formed on a first layer insulator film 820 in acorresponding region of a first WELL region 812 and a second WELL region814. Spacers 823 are formed on each side of a gate electrode 822. Firsttrenches 824 are formed corresponding with a source/drain region 812 aon a first layer insulator film 820. Conductor such as, for example,tungsten (W), aluminum (Al), and copper (Cu) is filled in a first trench824.

A second layer insulator film (ILD: Inter layer dielectric) 830 isformed on a first layer insulator film 820. Metal wire 831 is formedcorresponding with a first trench 824 on a second layer insulator film830.

A third layer insulator film (ILD: Inter layer dielectric) 840 is formedon a second layer insulator film 830. A photo diode 850 and a UV sensoris formed on a third layer insulator film 840. A photo diode 850comprises P+/P/N+ doping region and is placed on a section correspondingto the upper sensor section 810 formed on the semiconductor substrate800. Second trenches 841 are also formed on a third layer insulator film840.

A UV Block layer 860 is formed between a second layer insulator film 830and a third layer insulator film 840. A UV Block layer 860 blocks UV andonly transmits non-UV. A sensor section 810, which is formed on asemiconductor substrate 800, senses non-UV.

A fourth layer insulator film 870 is formed on a third layer insulatorfilm 840 and a metal wire 871 is formed on the fourth layer insulatorfilm 870. A metal wire 871 is connected with a photo diode 850 usingsecond trenches 841 or is connected with a metal wire 831 of a secondlayer insulator film 830.

A passivation layer 880 is formed on a fourth layer insulator film 870.In the example shown in FIG. 13, a photo diode 850 senses UV and asensor section 810 formed on lower photo diode 850 senses non-UV.

The examples disclosed in the description above use poly silicon layergrown on a semiconductor substrate as a UV sensor and provides a photosensor module of improved structure of other sensor section or a passivedevice that can sense non-UV, placed on a lower section of a UV sensor.

While this disclosure includes specific examples, it will be apparent toone of ordinary skill in the art that various changes in form anddetails may be made in these examples without departing from the spiritand scope of the claims and their equivalents. The examples describedherein are to be considered in a descriptive sense only, and not forpurposes of limitation. Descriptions of features or aspects in eachexample are to be considered as being applicable to similar features oraspects in other examples. Suitable results may be achieved if thedescribed techniques are performed in a different order, and/or ifcomponents in a described system, architecture, device, or circuit arecombined in a different manner and/or replaced or supplemented by othercomponents or their equivalents. Therefore, the scope of the disclosureis defined not by the detailed description, but by the claims and theirequivalents, and all variations within the scope of the claims and theirequivalents are to be construed as being included in the disclosure.

What is claimed is:
 1. A photo sensor module, comprising: asemiconductor substrate; a field oxide layer, formed on thesemiconductor substrate; a passive device, placed on the field oxidelayer; at least one insulator film laminated on the field oxide layer;and a photo diode formed on the at least one insulator film above thepassive device.
 2. The photo sensor module of claim 1, furthercomprising: a WELL region, formed on the semiconductor substrate; and adoping region of high concentration, formed on the WELL region.
 3. Thephoto sensor module of claim 1, further comprising a metal wire formedon the insulator film, and a trench connecting the metal wire to theWELL region.
 4. The photo sensor module of claim 3, wherein the trenchis filled with one of tungsten (W), aluminum (Al), or copper (Cu). 5.The photo sensor module of claim 3, wherein a doping region of the photodiode and a source/drain doping region of the WELL region are connectedwith a trench.
 6. The photo sensor module of claim 3, wherein: the metalwire surrounds a portion of the photo diode and a barrier metal isformed below the metal wire.
 7. The photo sensor module of claim 6,wherein the barrier metal comprises one of titanium(Ti), titaniumnitride layer(TiN), or a combination of titanium(Ti) and titaniumnitride layer(TiN).
 8. The photo sensor module of claim 1, furthercomprising: a first insulator film laminated on the field oxide layer, asecond insulator film laminated on the first insulator film, a thirdinsulator film laminated on the second insulator film, and a fourthinsulator film laminated on the third insulator film; at least one firstmetal wire formed in the second insulator film; at least one firsttrench formed in the first insulator film, and the at least one firsttrench connecting the at least one first metal wire to a source/draindoping region of a WELL region of the semiconductor substrate; at leastone second metal wire is formed on the fourth insulator film insulator;and the photo diode and at least one second trench is formed in thefourth insulator film, and the at least one second trench connecting theat least second first metal wire to the photo diode.
 9. The photo sensormodule of claim 8, wherein the third insulator film is thinner than theother insulator films.
 10. A photo sensor module, comprising: asemiconductor substrate; a sensor section formed in the semiconductorsubstrate; at least one insulator film laminated on the semiconductorsubstrate; a photo diode placed on an upper portion of the sensorsection and formed on the insulator film; and a UV shield formed betweenthe sensor section and the photo diode.
 11. The photo sensor module ofclaim 10, wherein: the sensor section is configured to sense non-UV, andthe photo diode is configured to sense UV.
 12. A photo sensor module,comprising: a semiconductor substrate; a doping region of highconcentration formed on the semiconductor substrate; a first field oxidelayer and a second field oxide layer formed on the semiconductorsubstrate; a first photo diode and a second photo diode formed on thefirst field oxide layer and the second field oxide layer, respectively;and a portion of the first photo diode and a portion of the second photodiode contacting with the doping region of high concentration.
 13. Thephoto sensor module of claim 12, wherein the first photo diode and thesecond photo diode are back-to-back diode.
 14. The photo sensor moduleof claim 12, a doping region of the first photo diode and a dopingregion of the second photo diode are enlarged to reach a source/draindoping region of a WELL region of the semiconductor substrate.